ULTRALOW THRESHOLD MULTIQUANTUM WELL INGAAS LASERS

被引：21
|
作者：
CHEN, TR [1 ]
ZHAO, B [1 ]
ZHUANG, YH [1 ]
YARIV, A [1 ]
UNGAR, JE [1 ]
OH, S [1 ]
机构：
[1] ORTEL CORP,ALHAMBRA,CA 91803
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 15期
关键词：
D O I：
10.1063/1.107186
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultralow threshold currents have been obtained in multiquantum well strained-layer InGaAs lasers. A cw threshold current of 1 mA in an uncoated double quantum well laser and a 0.35 mA (pulsed threshold current 0.25 mA) in a coated laser are demonstrated.
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页码：1782 / 1784
页数：3
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