SURFACE INTERACTIONS OF FLUOROZIRCONATE GLASS WITH LOW-ENERGY IMPLANTED AR-IONS, N-IONS AND O-IONS

被引:9
|
作者
DAI, YS [1 ]
KAWAGUCHI, T [1 ]
SUZUKI, K [1 ]
SUZUKI, S [1 ]
YAMAMOTO, K [1 ]
MASUI, A [1 ]
机构
[1] INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN
来源
关键词
FLUOROZIRCONATE GLASS; ION IMPLANTATION; OPTICAL SPECTROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY; X-RAY DIFFRACTION; SCANNING ELECTRON MICROSCOPY; WATER CORROSION; SURFACE PROPERTY;
D O I
10.1080/10420159108220744
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
A fluorozirconate glass was implanted with 15 ke V Ar, N and O ions. The implanted samples were characterized with optical spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy and water corrosion tests. The surface of Ar-ion implanted glass was depleted in fluorine and enriched with metallic zirconium precipitate. It was electrically conductive and susceptible to water corrosion. The N-ion implantation induced metallic zirconium and zirconium nitride formation as well as F depletion. The N-ion implanted surface was also conductive but strong against water corrosion. The oxyfluoride surface layer formed by O-ion implantation showed little influence on optical and electrical properties of the glass, and was highly durable against water corrosion. The significant dependence of the surface properties on implanted species is discussed with consideration of both physical andchemical features of incident ions. © 1991, Taylor & Francis Group, LLC. All rights reserved.
引用
收藏
页码:263 / 272
页数:10
相关论文
共 50 条
  • [1] ENERGY-LOSS AND ENERGY-LOSS STRAGGLING OF N-IONS, NE-IONS AND AR-IONS IN THIN TARGETS
    EFKEN, B
    HAHN, D
    HILSCHER, D
    WUSTEFELD, G
    NUCLEAR INSTRUMENTS & METHODS, 1975, 129 (01): : 219 - 225
  • [2] ACCELERATION OF DOUBLY CHARGED C-IONS, N-IONS, AND O-IONS AT A 3 MEGAVOLT VANDEGRAAFF
    MARTIN, FW
    NUCLEAR INSTRUMENTS & METHODS, 1975, 124 (02): : 329 - 333
  • [3] DEEP SURFACE DAMAGE OF SIO2 BY SPUTTERING WITH LOW-ENERGY AR-IONS
    COLLART, E
    VISSER, RJ
    SURFACE SCIENCE, 1989, 218 (2-3) : L497 - L504
  • [4] ELECTRON DETACHMENT IN COLLISIONS OF LOW-ENERGY O-IONS WITH N2
    COMPTON, RN
    BAILEY, TL
    JOURNAL OF CHEMICAL PHYSICS, 1970, 53 (01): : 454 - &
  • [5] Simulations of roughening of amorphous carbon surfaces bombarded by low-energy Ar-ions
    Koponen, I
    Hautala, M
    Sievanen, OP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 230 - 234
  • [6] MEASUREMENT OF ELECTRON-CAPTURE AND LOSS CROSS-SECTIONS BY C-IONS, N-IONS, O-IONS, AND F-IONS IN HE GAS
    DILLINGHAM, TR
    MACDONALD, JR
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (04): : 580 - 580
  • [7] OBSERVATION OF SELECTIVE ELECTRON-CAPTURE BY FULLY STRIPPED C-IONS, N-IONS AND O-IONS FROM H-ATOMS
    OHTANI, S
    KIMURA, M
    KOBAYASHI, N
    TAWARA, H
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1987, 56 (04) : 1271 - 1273
  • [8] Influence of Surface Curvature on Silicon Sputtering by Low-Energy Ar Ions
    Sycheva, A. A.
    TECHNICAL PHYSICS LETTERS, 2020, 46 (12) : 1184 - 1187
  • [9] Influence of Surface Curvature on Silicon Sputtering by Low-Energy Ar Ions
    A. A. Sycheva
    Technical Physics Letters, 2020, 46 : 1184 - 1187
  • [10] DEPTH PROFILES OF IMPLANTED LOW-ENERGY IONS IN METALS
    ZOMORRODIAN, A
    TOUGAARD, S
    IGNATIEV, A
    PHYSICA SCRIPTA, 1983, T6 : 76 - 78