DEMONSTRATION OF INGAAS ALGAAS STRAINED-LAYER DISTRIBUTED-FEEDBACK GRATING-SURFACE-EMITTING LASERS WITH A BURIED 2ND-ORDER GRATING STRUCTURE

被引：9
|
作者：
LIEW, SK
CARLSON, NW
BOUR, DP
EVANS, GA
VANGIESON, E
机构：
[1] David Sarnoff Research Center, Princeton
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期
关键词：
D O I：
10.1063/1.104697
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated InGaAs/AlGaAs strained-layer distributed-feedback grating-surface-emitting lasers with a buried grating structure. The device consists of a pumped distributed-feedback section terminated on both sides by unpumped distributed Bragg reflector sections. cw operation in a stable single longitudinal mode is achieved up to six times threshold. The threshold current density is approximately 600 A/cm2. The far-field beam divergence is predominantly single lobed and diffraction limited. The spectral linewidth is 1.0 MHz at an output power of 8 mW.
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收藏
页码：228 / 230
页数：3
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