INTERFERENCE BETWEEN ELECTRONIC AND LO-VIBRONIC INELASTIC LIGHT-SCATTERING IN PERIODICALLY DELTA-DOPED GAAS

被引：9
|
作者：
IORIATTI, L
机构：
[1] Instituto De Fisica E Quimica De SÃo Carlos, Universidade De SÃo Paulo, Sao Carlos, Sao Paulo
来源：
PHYSICAL REVIEW B | 1991年 / 43卷 / 18期
关键词：
D O I：
10.1103/PhysRevB.43.14742
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The recently observed asymmetry in the Raman lines of periodically delta-doped GaAs in the region of the LO phonon is theoretically interpreted as the interference of a continuum of single-particle transitions with the LO one-phonon line. The dependence of the line shape on the exciting frequency is produced by the difference in resonant behavior exhibited by these two light-scattering mechanisms.
引用
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页码：14742 / 14745
页数：4
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