TEMPERATURE-DEPENDENCE OF OPTICAL-CONSTANTS FOR AMORPHOUS-SILICON

被引：31

作者：

DO, N

KLEES, L

LEUNG, PT

TONG, F

LEUNG, WP

TAM, AC

机构：

[1] SAN JOSE STATE UNIV, DEPT PHYS, SAN JOSE, CA 95192 USA

[2] TH DARMSTADT, INST ANGEW PHYS, W-6100 DARMSTADT, GERMANY

[3] PORTLAND STATE UNIV, DEPT PHYS, PORTLAND, OR 97207 USA

[4] IBM CORP, THOMAS J WATSON RES CTR, DIV RES, YORKTOWN HTS, NY 10598 USA

[5] IBM CORP, SAN JOSE, CA 95193 USA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期

关键词：

D O I：

10.1063/1.107074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence of the optical constants for amorphous silicon (a-Si) is studied for two different sample thicknesses at two infrared wavelengths. It is observed that the extinction coefficient of a-Si can increase significantly with temperature in the strong absorption regime. In addition, using the Mott-Davis formula, results are obtained for the variation of the optical gap energy for a-Si with temperature, with similar feature observed for both amorphous and crystal silicon.

引用

页码：2186 / 2188

页数：3

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