ANISOTROPIC REACTIVE ION ETCHING OF INP IN METHANE/HYDROGEN BASED PLASMAS

被引：23

作者：

MCNABB, JW ^{[1
]}

CRAIGHEAD, HG ^{[1
]}

TEMKIN, H ^{[1
]}

LOGAN, RA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.585839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reactive ion etching of InP in CH4/H2 has been studied to assess anisotropy and surface morphology. Empirical models have been developed for etch and polymer deposition rates. Highly anisotropic features characterized by high ratios of etch to polymer formation rates are obtained at low methane concentration and relatively high power density. The inclusion of oxygen in the gas composition reduces polymer deposition but increases surface roughness.

引用

页码：3535 / 3537

页数：3

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