Features of tensoresistance in single crystals of germanium and silicon with different dopants

被引：2

作者：

Baranskii, P., I ^{[1
]}

Gaidar, G. P. ^{[2
]}

机构：

[1] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 45 Prospect Nauky, UA-03680 Kiev, Ukraine

[2] Natl Acad Sci Ukraine, Inst Nucl Res, 47 Prospect Nauky, UA-03680 Kiev, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2016年 / 19卷 / 01期

关键词：

germanium; silicon; dopant impurity; tensoresistance; anisotropy parameter of mobility;

D O I：

10.15407/spqeo19.01.039

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Tensoresistance in single crystals of germanium and silicon with different dopants but under practically equal charge carrier concentrations have been investigated. The features of rho(X)/rho(0) = f(X) function, which depend on individual physical-chemical properties of dopants, have been discussed in this paper.

引用

页码：39 / 43

页数：5

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