High-temperature processing of crystalline silicon thin-film solar cells

被引：27
|
作者：
Reber, S [1 ]
Wettling, W [1 ]
机构：
[1] Fraunhofer Inst Solar Energy Syst, ISE, D-79100 Freiburg, Germany
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / 02期
关键词：
D O I：
10.1007/s003390050992
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The crystalline silicon thin-film solar cell combines, in principle, the advantages of crystalline silicon wafer-based solar cells and of thin-film solar cell technologies. Its efficiency potential is the highest of all thin-film cells. In the "high-temperature approach" thin silicon layers are deposited on substrates that withstand processing temperatures higher than 1000 degrees C. The basic features of the high-temperature crystalline silicon thin-film cell technology are described and some important results are discussed.
引用
收藏
页码：215 / 220
页数：6
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