POSITRONIUM IN QUANTUM-WELL SEMICONDUCTOR STRUCTURES

被引:0
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作者
PROKOPEV, EP
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 10期
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中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The wave function proposed by Efros [Sov. Phys. Semicond. 20, 808 (1986)] for an exciton state of positronium Ps is used to calculate its annihilation characteristics in quantum-well semiconductor structures exhibiting strong anomalies. It is shown that in the case of a ''silicon'' quantum well the contribution of the intrinsic annihilation of para-Ps to the overall annihilation process is 6.5% (corresponding to the case where d much less than a; here, d is the width of a quantum well and a is the Bohr radius of Ps). These specific states of para-Ps may be observed in precision experiments at liquid-helium temperatures.
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页码:941 / 944
页数:4
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