ELECTROMIGRATION-INDUCED FAILURES IN THIN-FILM AL-CU CONDUCTORS

被引：15

作者：

AGARWALA, BN ^{[1
]}

BERENBAUM, L ^{[1
]}

PERESSININ, P ^{[1
]}

机构：

[1] IBM CORP, SYST PROD DIV, E FISHKILL FACIL, HOPEWELL JUNCTION, NY 12533 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 01期

关键词：

D O I：

10.1007/BF02654549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：137 / 153

页数：17

共 50 条

[1] Kinetics of electromigration-induced edge drift in Al-Cu thin-film interconnects
Kim, CU
Morris, JW
Lee, HM
[J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) : 1592 - 1598
[2] Kinetics of electromigration-induced edge drift in Al-Cu thin-film interconnects
[J]. J Appl Phys, 4 (1592):
[3] EFFECT OF MICROSTRUCTURE ON ELECTROMIGRATION LIFE OF THIN-FILM AL-CU CONDUCTORS
AGARWALA, BN
PATNAIK, B
SCHNITZE.R
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1487 - &
[4] EFFECT OF MICROSTRUCTURE ON ELECTROMIGRATION LIFE OF THIN-FILM AL-CU CONDUCTORS
AGARWALA, BN
SCHNITZE.R
PATNAIK, B
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 283 - &
[5] THE EFFECT OF MICROSTRUCTURE ON THE RESISTANCE TO ELECTROMIGRATION OF AL-CU THIN-FILM CONDUCTORS
PATRINOS, AJ
SCHWARZ, JA
[J]. THIN SOLID FILMS, 1991, 196 (01) : 47 - 63
[6] ELECTROMIGRATION-INDUCED FAILURES IN ALUMINUM FILM CONDUCTORS
BLAIR, JC
GHATE, PB
HAYWOOD, CT
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 281 - &
[7] STUDY OF ELECTROMIGRATION-INDUCED RESISTANCE AND RESISTANCE DECAY IN AL THIN-FILM CONDUCTORS
LLOYD, JR
KOCH, RH
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (03) : 194 - 196
[8] MORPHOLOGY OF ELECTROMIGRATION-INDUCED DAMAGE AND FAILURE IN AL-ALLOY THIN-FILM CONDUCTORS
SANCHEZ, JE
MCKNELLY, LT
MORRIS, JW
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (11) : 1213 - 1220
[9] THE ROLE OF METAL AND PASSIVATION DEFECTS IN ELECTROMIGRATION-INDUCED DAMAGE IN THIN-FILM CONDUCTORS
LLOYD, JR
SMITH, PM
PROKOP, GS
[J]. THIN SOLID FILMS, 1982, 93 (3-4) : 385 - 395
[10] ELECTROMIGRATION OF NI IN AL THIN-FILM CONDUCTORS
DHEURLE, FM
GANGULEE, A
ALIOTTA, CF
RANIERI, VA
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4845 - 4846

← 1 2 3 4 5 →