A DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF RAPID THERMAL ANNEALED ARSENIC IMPLANTED SILICON

被引：3
|
作者：
BECK, SE
JACCODINE, RJ
CLARK, C
机构：
[1] LEHIGH UNIV,SHERMAN FAIRCHILD CTR SOLID STATE STUDIES 161,BETHLEHEM,PA 18015
[2] AT&T BELL LABS,ALLENTOWN,PA 18103
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 01期
关键词：
ION IMPLANTATION; DAMAGE; RAPID THERMAL ANNEALING; DEEP LEVEL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY;
D O I：
10.1007/BF02670932
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deep level traps are observed in silicon that has been implanted with high doses of arsenic and subsequently annealed by rapid thermal annealing. The doses studied create enough damage to form a surface amorphous layer. Annealing temperatures, implant fluence, and the presence of a surface amorphous layer contribute to the type of trap observed. These results show evidence for a clustering/declustering mechanism of arsenic in silicon during rapid thermal annealing.
引用
收藏
页码：125 / 128
页数：4
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