ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS

被引:115
|
作者
BABIC, DI
STREUBLE, K
MIRIN, RP
MARGALIT, NM
BOWERS, JE
HU, EL
MARS, DE
YANG, L
CAREY, K
机构
[1] ROYAL INST TECHNOL,S-10044 STOCKHOLM,SWEDEN
[2] HEWLETT PACKARD CORP,PALO ALTO,CA
关键词
Room temperature continuous wave operation - Scanning electron micrograph - Threshold current - Vertical cavity lasers - Wafer fusion;
D O I
10.1109/68.473453
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the room-temperature continuous-wave operation of vertical-cavity lasers operating at 154 mu m. The devices me a 7 strain-compensated quantum-well active layer sandwiched between two Al(Ga)As-GaAs quarter-wave mirrors joined by wafer fusion. Five device sizes between 8 and 20 mu m were found to operate continuously at room temperature (23 degrees C). The lowest room-temperature continuous-wave threshold current of 2.3 mA was measured on an 8-mu m diameter device, while the highest continuous-wave operating temperature of 33 degrees C was measured on a 12-mu m device.
引用
收藏
页码:1225 / 1227
页数:3
相关论文
共 50 条
  • [1] Room-temperature performance of double-fused 1.54 mu m vertical-cavity lasers
    Babic, DI
    Streubel, K
    Mirin, RP
    Piprek, J
    Margalit, NM
    Bowers, JE
    Hu, EL
    Mars, DE
    Yang, L
    Carey, K
    [J]. 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 719 - 722
  • [2] ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SURFACE-EMITTING GAAS INJECTION-LASERS
    TAI, K
    FISCHER, RJ
    SEABURY, CW
    OLSSON, NA
    HUO, TCD
    OTA, Y
    CHO, AY
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (24) : 2473 - 2475
  • [3] Room-Temperature Continuous-Wave Operation of 2.3-μm Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers
    Ducanchez, A.
    Cerutti, L.
    Grech, P.
    Genty, F.
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (17-20) : 1745 - 1747
  • [4] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF RED VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES
    LOTT, JA
    SCHNEIDER, RP
    CHOQUETTE, KD
    KILCOYNE, SP
    FIGIEL, JJ
    [J]. ELECTRONICS LETTERS, 1993, 29 (19) : 1693 - 1694
  • [5] ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SINGLE-QUANTUM-WELL MICROLASER DIODES
    LEE, YH
    JEWELL, JL
    SCHERER, A
    MCCALL, SL
    HARBISON, JP
    FLOREZ, LT
    [J]. ELECTRONICS LETTERS, 1989, 25 (20) : 1377 - 1378
  • [6] Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth
    Izumi, Shouichiro
    Fuutagawa, Noriyuki
    Hamaguchi, Tatsushi
    Murayama, Masahiro
    Kuramoto, Masaru
    Narui, Hironobu
    [J]. APPLIED PHYSICS EXPRESS, 2015, 8 (06)
  • [7] Room-Temperature Continuous-Wave Operation of Organometal Halide Perovskite Lasers
    Li, Zhitong
    Moon, Jiyoung
    Gharajeh, Abouzar
    Haroldson, Ross
    Hawkins, Roberta
    Hu, Walter
    Zakhidovi, Anvar
    Gu, Qing
    [J]. ACS NANO, 2018, 12 (11) : 10968 - 10976
  • [8] Numerical analysis of 1.54 mu m double-fused vertical-cavity lasers operating continuous-wave up to 33 degrees C
    Piprek, J
    Babic, DI
    Bowers, JE
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (19) : 2630 - 2632
  • [9] Comment on "Room-Temperature Continuous-Wave Operation of Organometal Halide Perovskite Lasers"
    Brenner, P.
    Paetzold, U. W.
    Turnbull, G. A.
    Giebink, N. C.
    Samuel, I. D. W.
    Lemmer, U.
    Howard, I. A.
    [J]. ACS NANO, 2019, 13 (11) : 12257 - 12258
  • [10] Near room-temperature continuous-wave operation of electrically pumped 1.55 μm vertical cavity lasers with InGaAsP/InP bottom mirror
    Rapp, S
    Salomonsson, F
    Bentell, J
    Sagnes, I
    Moussa, H
    Mériadec, C
    Raj, R
    Streubel, K
    Hammar, M
    [J]. ELECTRONICS LETTERS, 1999, 35 (01) : 49 - 50