INTERFACE RECOMBINATION AND CARRIER CONFINEMENT AT A GAAS/GAXIN1-XP DOUBLE HETEROJUNCTION STUDIED BY PICOSECOND POPULATION MODULATION SPECTROSCOPY

被引:14
|
作者
HARRIS, JH
SUGAI, S
NURMIKKO, AV
机构
关键词
D O I
10.1063/1.92935
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:885 / 887
页数:3
相关论文
共 7 条
  • [1] Radiative recombination of carriers in the GaxIn1-xP/GaAs double-junction tandem solar cells
    Deng, Z.
    Wang, R. X.
    Ning, J. Q.
    Zheng, C. C.
    Bao, W.
    Xu, S. J.
    Zhang, X. D.
    Lu, S. L.
    Dong, J. R.
    Zhang, B. S.
    Yang, H.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2013, 111 : 102 - 106
  • [2] Super transverse diffusion of minority carriers in GaxIn1-xP/GaAs double-junction tandem solar cells
    Deng, Z.
    Wang, R. X.
    Ning, J. Q.
    Zheng, C. C.
    Xu, S. J.
    Xing, Z.
    Lu, S. L.
    Dong, J. R.
    Zhang, B. S.
    Yang, H.
    SOLAR ENERGY, 2014, 110 : 214 - 220
  • [3] TIME RESOLVED MODULATED REFLECTION AND SPIN POLARIZATION SPECTROSCOPY OF NEAR BAND-EDGE EXCITATIONS IN GAXIN1-XP AND GAAS
    HARRIS, JH
    SUGAI, S
    NURMIKKO, AV
    APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY, 1982, 28 (2-3): : 252 - 252
  • [4] INTERFACE RECOMBINATION VELOCITY AND MISFIT STRAIN IN MOLECULAR-BEAM EPITAXY DOUBLE HETEROSTRUCTURES OF GAAS-GAXIN1-XP(0.47LESS-THANXLESS-THAN0.51)
    SCOTT, GB
    DUGGAN, G
    ROBERTS, JS
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6312 - 6315
  • [5] Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy -: art. no. 165327
    Shao, J
    Winterhoff, R
    Dörnen, A
    Baars, E
    Chu, JH
    PHYSICAL REVIEW B, 2003, 68 (16)
  • [6] Carrier confinement observed at modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterojunction interface
    Oshima, Takayoshi
    Kato, Yuji
    Kawano, Naoto
    Kuramata, Akito
    Yamakoshi, Shigenobu
    Fujita, Shizuo
    Oishi, Toshiyuki
    Kasu, Makoto
    APPLIED PHYSICS EXPRESS, 2017, 10 (03)
  • [7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAXIN1-XP-GAAS (X-SIMILAR-TO-0.5) DOUBLE-HETEROJUNCTION LASER-DIODES USING SOLID PHOSPHORUS AND ARSENIC VALVED CRACKING CELLS
    BAILLARGEON, JN
    CHO, AY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 736 - 738