POSSIBILITY OF HYDROGEN MIGRATION IN PHOTOINDUCED DEFECT CREATION PROCESS OF A-SI-H

被引：0
|
作者：
KONDO, M [1 ]
MORIGAKI, K [1 ]
机构：
[1] UNIV TOKYO, INST SOLID STATE PHYS, MINATO KU, TOKYO 106, JAPAN
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 164卷
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D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The possibility of hydrogen migration accompanying photoinduced defect creation has been proposed from optically detected electron nuclear double resonance (ODENDOR) measurements. The matrix-ODENDOR signal due to the dipole-dipole interaction between trapped heres and hydrogen nuclei changes its line shape upon light exposure. A similar effect is induced by the application of pressure. The change in the line shape is discussed, taking into account the hydrogen migration and other effects.
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页码：227 / 230
页数：4
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