PASSIVATION OF THE INP(100) SURFACE USING (NH4)(2)S-X

被引：0
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作者：
CHEN, WD
XIE, K
DUAN, LH
XIE, XL
CUI, YD
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来源：
ACTA PHYSICA SINICA-OVERSEAS EDITION | 1995年 / 4卷 / 11期
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O4 [物理学];
学科分类号：
0702 ;
摘要：
InP(100) surface treated with (NH4)(2)S-x has been investigated by using photoluminescence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy. It is found that PL intensity increased by a factor of 3.3 after (NH4)(2)S-x passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies.
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页码：859 / 863
页数：5
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