REGENERATIVE SWITCHING PROPERTIES OF A SAWTOOTH-DOPING-SUPERLATTICE-COLLECTOR BIPOLAR-TRANSISTOR

A molecular beam epitaxially grown GaAs three-terminal switching device with controllable S-shaped negative differential resistance (NDR) and switching voltages has been fabricated and demonstrated. The current-voltage and switching characteristics of this device are excellent and reproducible. The switching voltage V(S)=9.6 V and holding voltage V(H)=5.1 V are obtained under two-terminal operation. If a base current I(B) is applied, this device exhibits a controllable S-shaped NDR phenomena both at the forward and reverse I(B) conditions. A bipolar transistor behavior with a current gain of over 20 is further achieved when the forward I(B) is employed. The proposed device having good potential for high speed and switching circuit applications has been shown by the results.