Local Structure around Ge Atoms in IV-VI Ferromagnetic Semiconductor Ge0.6Mn0.4Te by X-Ray Fluorescence Holography

被引:3
|
作者
Happo, Naohisa [1 ]
Takehara, Yuki [1 ]
Fujiwara, Makoto [1 ]
Tanaka, Koichi [1 ]
Senba, Shinya [2 ]
Hosokawa, Shinya [3 ]
Hayashi, Kouichi [4 ]
Hu, Wen [5 ]
Suzuki, Motohiro [5 ]
Asada, Hironori [6 ]
机构
[1] Hiroshima City Univ, Grad Sch Informat Sci, Hiroshima 7313194, Japan
[2] Ube Natl Coll Technol, Dept Electir Engn, Ube, Yamaguchi 7558555, Japan
[3] Ctr Mat Res Using Third Generat Synchrotron Radia, Hiroshima Inst Technol, Hiroshima 7315193, Japan
[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[5] JAEA, SPring 8, Sayo, Hyogo 6795148, Japan
[6] Yamaguchi Univ, Grad Sch Sci & Engn, Ube, Yamaguchi 7558611, Japan
关键词
Molecular beam epitaxy; X-ray scattering; diffraction; and reflection; Fluctuation; Magnetic films; Semiconducting films;
D O I
10.1380/ejssnt.2011.247
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Local atomic structure around Ge atoms in Ge1-xMnxTe thin film single crystal has been investigated by X-ray fluorescence holography (XFH) at room temperature. Obtained atomic image suggests that the Ge position is not stable at the exact positions of fcc cation sublattice, and reveal the fluctuations of Ge positions and/or the existence of cation vacancies.
引用
收藏
页码:247 / 250
页数:4
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