TRANSIENT STIMULATED RAMAN-SCATTERING IN LEAD VAPOR

被引：7
|
作者：
MARSHALL, LR
PIPER, JA
机构：
[1] Centre for Lasers & Applications, Macquarie University
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1990年 / 26卷 / 06期
基金：
澳大利亚研究理事会;
关键词：
D O I：
10.1109/3.108105
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An investigation of stimulated Raman scattering of shortpulse (6 ns) XeCl-laser radiation in Pb vapor is reported. Conversion efficiencies, based on peak power, up to 15% have been obtained for Pb-oven temperatures of 1260°C. The functional dependence of conversion efficiency, in the short-pulse regime, upon buffer-gas pressure and species differs significantly from that observed for long-pulse (> 20 ns) pumping, corresponding to steady-state behavior. Analysis of the data, and comparison with transient SRS in H2, yields an estimate of T2 ≈ 1 ns for the transient response time T2 of Pb vapor. The observed pressure effects are explained in terms of a reduction in T2, and hence Raman gain, by collisions with buffer-gas atoms. © 1990 IEEE
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页码：1098 / 1104
页数：7
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