MULTISHOT EVOLUTION OF LASER-INDUCED PERIODIC STRUCTURE ON THE SURFACE OF POLYCRYSTALLINE SILICON-ON-INSULATOR

被引:2
|
作者
LEE, TD [1 ]
LEE, HW [1 ]
NAM, CH [1 ]
KIM, JK [1 ]
PARK, CO [1 ]
机构
[1] KYOUNGWON UNIV,DEPT PHYS,SEONGNAM,SOUTH KOREA
关键词
D O I
10.1063/1.350799
中图分类号
O59 [应用物理学];
学科分类号
摘要
The multi-shot evolution of laser-induced periodic structure was studied by the time-resolved optical diffraction and reflection from the surface of polycrystalline silicon-on-insulator during the accumulation of 20 ns ruby laser pulses. In contrast to the results previously reported for the bulk sample, it was observed that the channel of the periodic structure development changed during the multiple irradiations even with a fixed fluence. The observed change occurs because the energy absorption is enhanced by the presence of the periodic structure preformed by the preceding pulses, and the absorbed laser energy at the polycrystalline layer is insulated by the underlying SiO2 layer. A previously unappreciated dip structure was observed in the time-resolved diffraction and a possible explanation is suggested postulating the preferential energy deposition in the valleys of the periodic structure.
引用
收藏
页码:4208 / 4211
页数:4
相关论文
共 50 条
  • [1] Laser-induced periodic surface structure in silicon wafer irradiated by continuous laser
    Zhang, X.
    Lu, J.
    Zhang, H. C.
    Li, Z. W.
    Wu, W. Y.
    Gong, Y. C.
    Yang, Y. T.
    FIFTH INTERNATIONAL SYMPOSIUM ON LASER INTERACTION WITH MATTER, 2019, 11046
  • [2] Laser-induced lateral epitaxy in fully depleted silicon-on-insulator junctions
    Dezfulian, KK
    Krusius, JP
    Thompson, MO
    Talwar, S
    APPLIED PHYSICS LETTERS, 2002, 81 (12) : 2238 - 2240
  • [3] Pulsed Laser-Induced Transient Currents in Bulk and Silicon-On-Insulator FinFETs
    El-Mamouni, F.
    Zhang, E. X.
    Schrimpf, R. D.
    Reed, R. A.
    Galloway, K. F.
    2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2011,
  • [4] Evolution of femtosecond laser-induced periodic structures formed on amorphous silicon surface
    Shuleiko, D. V.
    Martyshov, M. N.
    Presnov, D. E.
    Zabotnov, S. V.
    Kashkarov, P. K.
    METANANO 2019, 2020, 1461
  • [5] Growth of GaAs on polycrystalline silicon-on-insulator
    J. Riikonen
    A. Säynätjoki
    M. Sopanen
    H. Lipsanen
    J. Ahopelto
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 403 - 405
  • [6] Growth of GaAs on polycrystalline silicon-on-insulator
    Riikonen, J
    Säynätjoki, A
    Sopanen, M
    Lipsanen, H
    Ahopelto, J
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (5-7) : 403 - 405
  • [7] Crystal orientation dependence of femtosecond laser-induced periodic surface structure on (100) silicon
    Jiang, Lan
    Han, Weina
    Li, Xiaowei
    Wang, Qingsong
    Meng, Fantong
    Lu, Yongfeng
    OPTICS LETTERS, 2014, 39 (11) : 3114 - 3117
  • [8] Femtosecond laser-induced periodic surface structure on ZnO
    Guo, X. D.
    Li, R. X.
    Hang, Y.
    Xu, Z. Z.
    Yu, B. K.
    Ma, H. L.
    Lu, B.
    Sun, X. W.
    MATERIALS LETTERS, 2008, 62 (12-13) : 1769 - 1771
  • [9] Research Progress of Laser-Induced Surface Periodic Structure
    Wang Tianyu
    Li Xin
    Bian Jintian
    Sun Xiaoquan
    LASER & OPTOELECTRONICS PROGRESS, 2021, 58 (07)
  • [10] TIME-RESOLVED EVOLUTION OF LASER-INDUCED PERIODIC SURFACE-STRUCTURE ON GERMANIUM
    YOUNG, JF
    PRESTON, JS
    SIPE, JE
    VANDRIEL, HM
    PHYSICAL REVIEW B, 1983, 27 (02): : 1424 - 1427