THICKNESS EFFECT ON HYDROGEN PLASMA TREATMENT ON POLYCRYSTALLINE SILICON THIN-FILMS

被引：5

作者：

LIOU, BW ^{[1
]}

WU, YH ^{[1
]}

LEE, CL ^{[1
]}

LEI, TF ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV, INST ELECTR, HSINCHU, TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 22期

关键词：

D O I：

10.1063/1.114261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter studies the hydrogen plasma effects on the resistivity, effective free carrier concentration, and mobility of As+- and BF2+-doped polycrystalline silicon (polysilicon) thin films of various thicknesses. It is found that the resistivity increases while the effective free carrier concentration decreases after the plasma treatment as the thickness of the polysilicon film decreases. The mobility typically tends to decrease for the thicker (>60 nm) polysilicon film, but to increase for the thinner (<60 nm) polysilicon film.© 1995 American Institute of Physics.

引用

页码：3013 / 3014

页数：2

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