6190-A EMISSION AT 77 K OF GA1-XALXAS DOUBLE HETEROSTRUCTURE LASERS

被引：8
|
作者：
ITOH, K [1 ]
机构：
[1] MATSUSHITA ELECT CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 03期
关键词：
D O I：
10.1063/1.1655121
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：127 / 129
页数：3
相关论文
共 50 条
  • [1] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS
    GOODWIN, AR
    PETERS, JR
    PION, M
    THOMPSON, GHB
    WHITEAWAY, JEA
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3126 - 3131
  • [2] CHARACTERIZATION OF MOCVD GROWN GA1-XALXAS FOR DOUBLE HETEROSTRUCTURE LASERS
    GLEW, RW
    GARRETT, B
    BRIGGS, ATR
    THRUSH, EJ
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (07) : 701 - 705
  • [3] TEM OBSERVATION OF CATASTROPHICALLY DEGRADED GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS
    UEDA, O
    IMAI, H
    KOTANI, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6643 - 6647
  • [4] ENHANCED LOCALIZED DEGRADATION AND ANOMALOUS EMISSION-SPECTRA OF GA1-XALXAS DOUBLE HETEROSTRUCTURE LASERS INDUCED BY FABRICATION PROCESSES
    NEWMAN, DH
    GODFREY, RF
    GOODWIN, AR
    LOVELACE, DF
    [J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 353 - 355
  • [5] EFFECTS OF HYDROSTATIC-PRESSURE ON EMISSION OF GA1-XALXAS LASERS
    JURAVEL, Y
    HALPERN, T
    RACCAH, PM
    POLLAK, FH
    KRESSEL, H
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 385 - 385
  • [6] DISTRIBUTED-FEEDBACK COUPLING IN GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS - EFFECT OF ALUMINUM CONCENTRATION
    BOYD, JT
    ANDERSON, DB
    [J]. APPLIED OPTICS, 1975, 14 (09): : 2199 - 2202
  • [7] AGING CHARACTERISTICS OF GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS BONDED WITH GOLD EUTECTIC ALLOY SOLDER
    FUJIWARA, K
    FUJIWARA, T
    HORI, K
    TAKUSAGAWA, M
    [J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 668 - 670
  • [8] RELIABILITY OF GA1-XALXAS INJECTION-LASERS
    GOODWIN, AR
    HENSHALL, GD
    SELWAY, PR
    OHARA, S
    NEWMAN, D
    DOBSON, P
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 437 - 437
  • [9] Ballistic electron emission microscopy of InAs/Ga1-xAlxAs relaxed heterostructure interfaces
    Ke, ML
    Westwood, DI
    Matthai, CC
    Richardson, B
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 349 - 352
  • [10] STABLE OPERATION OF BURIED-HETEROSTRUCTURE GA1-XALXAS LASERS DURING ACCELERATED AGING
    KAJIMURA, T
    SAITO, K
    SHIGE, N
    ITO, R
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 626 - 628
12345