THE IMPORTANCE OF THE NON-QUASI-STATIC BIPOLAR-TRANSISTOR MODEL FOR CIRCUIT APPLICATIONS

被引：2
|
作者：
CHEN, MK
机构：
[1] GM Hughes Electronics, Delco Electronics Corporation, Kokomo, IN
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1991年 / 26卷 / 02期
关键词：
D O I：
10.1109/4.68132
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper addresses the need for the non-quasi-static bipolar device models from a practical viewpoint. Previous work focused on improvement of the non-quasi-static models for a single device. This paper shows the importance of the non-quasi-static models in small-signal circuit applications. The circuit example chosen is lateral p-n-p transistors used as series pass transistors in a series voltage regulator. For the series voltage regulator, the non-quasi-static inductance (L) model correctly predicts the rapid falloff of the magnitude of the current gain and thus reduces the required internal compensation and subsequent circuit area.
引用
收藏
页码：153 / 160
页数：8
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