FULLY DECODED 2048-BIT ELECTRICALLY PROGRAMMABLE FAMOS READ-ONLY MEMORY

被引：33

|

作者：

FROHMANB.D

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1971年 / SC 6卷 / 05期

关键词：

D O I：

10.1109/JSSC.1971.1050191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：301 / &

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