DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON FILMS INDUCED BY VACUUM-ULTRAVIOLET LIGHT FROM SYNCHROTRON AND UNDULATOR RADIATION

被引：3

作者：

SAITO, Y ^{[1
]}

YOSHIDA, A ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECTR ENGN,TOYOHASHI 441,JAPAN

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1994年 / 70卷 / 01期

关键词：

D O I：

10.1080/01418639408240201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vacuum ultraviolet light from synchrotron and undulator radiation sources creates defects in hydrogenated amorphous silicon films. The dependence of the defect creation kinetics on photon energy has been investigated. The concentration of the defects induced by photons having an energy above 24 eV is proportional to the irradiation time. The rapid defect creation is due to the breaking of silicon-silicon bonds by the photo-induced plasmons.

引用

页码：133 / 139

页数：7

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