STRUCTURAL-PROPERTIES OF CUINXGA1-XSE2 THIN-FILMS PREPARED BY RF-SPUTTERING - COMMENT

被引：1
|
作者：
RINCON, C
QUINTERO, M
TINOCO, T
机构：
[1] Centro de Estudios de Semiconductores, Departamento de Física, Universidad de Los Andes, Mérida
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 10期
关键词：
D O I：
10.1063/1.355710
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An attempt to clarify the controversy related to the crystal structure of the CuInGa1-xSe2 alloy system is given. For In-rich samples the crystal structure can be identified by the appearance of lines due to the order of cations in the chalcopyrite structure, while for Ga-rich samples the structure is identified by line splitting of the structure lines.
引用
收藏
页码：5463 / 5463
页数：1
相关论文
共 50 条
  • [1] STRUCTURAL-PROPERTIES OF CUINXGA1-XSE2 THIN-FILMS PREPARED BY RF-SPUTTERING
    YAMAGUCHI, T
    MATSUFUSA, J
    YOSHIDA, A
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (12) : 5657 - 5662
  • [2] STRUCTURAL-PROPERTIES OF CUINXGA1-XSE2 THIN-FILMS PREPARED BY RF SPUTTING - RESPONSE
    YAMAGUCHI, T
    YOSHIDA, A
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) : 4457 - 4457
  • [3] OPTICAL-PROPERTIES IN RF-SPUTTERED CUINXGA1-XSE2 THIN-FILMS
    YAMAGUCHI, T
    MATSUFUSA, J
    YOSHIDA, A
    APPLIED SURFACE SCIENCE, 1993, 70-1 (1 -4 pt B) : 669 - 674
  • [4] Structural and optical properties of CuInxGa1-xSe2 thin films prepared by flash evaporation
    Benslim, N
    Cowache, P
    Hannech, EB
    Benabdeslem, M
    Béchiri, L
    Mahdjoubi, L
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (11) : 1205 - 1208
  • [5] OPTICAL-TRANSITIONS IN RF-SPUTTERED CUINXGA1-XSE2 THIN-FILMS
    YAMAGUCHI, T
    MATSUFUSA, J
    YOSHIDA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (6A): : L703 - L705
  • [6] Optical transitions in RF sputtered CuInxGa1-xSe2 thin films
    Yamaguchi, Toshiyuki, 1600, (31):
  • [7] Electrodeposition of CuInxGa1-xSe2 thin films
    Friedfeld, R
    Raffaelle, RP
    Mantovani, JG
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1999, 58 (04) : 375 - 385
  • [8] PREPARATION AND CHARACTERIZATIONS OF CUINXGA1-XSE2 THIN-FILMS CRYSTALLIZED BY ANNEALING
    YAMAGUCHI, T
    SUZUKI, M
    YOSHIDA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 : 62 - 64
  • [9] CuInxGa1-xSe2 thin films prepared by electron beam evaporation
    Venkatachalam, M.
    Kannan, M. D.
    Jayakumar, S.
    Balasundaraprabhu, R.
    Nandakumar, A. K.
    Muthukumarasamy, N.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (05) : 571 - 575
  • [10] Properties of Sonochemically Prepared CuInxGa1-xS2 and CuInxGa1-xSe2
    Jesionek, M.
    Nowak, M.
    Szperlich, P.
    Kepinska, M.
    Mistewicz, K.
    Toron, B.
    Stroz, D.
    Szala, J.
    Rzychon, T.
    ACTA PHYSICA POLONICA A, 2014, 126 (05) : 1107 - 1109
12345