EFFECT OF CARBON-TETRACHLORIDE ON THE SELECTIVE GROWTH OF GALLIUM-ARSENIDE LAYERS IN THE MOC HYDRIDE PROCESS

被引：0

|

作者：

VOLODKO, VG

ZVONKOV, BN

ZNYSHEVA, LN

PORTNOV, VN

机构：

来源：

INORGANIC MATERIALS | 1993年 / 29卷 / 03期

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：469 / 471

页数：3

相关论文

共 47 条

[1] GROWTH MECHANISMS OF EPITAXIAL LAYERS OF GALLIUM-ARSENIDE IN THE HYDRIDE METHOD WITH USE OF TRIMETHYLGALLIUM
IVANYUTIN, LA
ARENDARENKO, AA
SOKOLOV, EB
SLEPNEV, YV
SHCHETININA, GN
STOLYAROVA, MA
INORGANIC MATERIALS, 1980, 16 (01) : 11 - 14
[2] ANALYSIS OF THE GROWTH-RATE ANISOTROPY OF GALLIUM-ARSENIDE LAYERS
LAVRENTYEVA, LG
KRISTALLOGRAFIYA, 1982, 27 (04): : 818 - 821
[3] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE LAYERS OF GERMANIUM SUBSTRATES
KAMADJIE.PR
SOTIROV, SS
DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1972, 25 (11): : 1499 - 1502
[4] ISOTHERMAL GROWTH OF EPITAXIAL LAYERS OF GALLIUM-ARSENIDE FROM STIRRED GALLIUM SOLUTIONS
KUZNETSOV, FA
TCHISTANOVA, ST
BORISOVA, LA
KOSYAKOV, VI
DOROHOV, AN
THIN SOLID FILMS, 1976, 32 (01) : 93 - 99
[5] INITIAL-STAGE OF GROWTH OF HETEROEPITAXIAL LAYERS OF GALLIUM-ARSENIDE ON SAPPHIRE
STEPCHEN.OV
CHISTYAK.YD
ANDREEV, VM
GALIKIN, BD
MARKOVA, TI
PECHKINA, LD
KRISTALLOGRAFIYA, 1974, 19 (03): : 670 - &
[6] EFFECT OF ELECTRICAL-FIELD ON GROWTH OF GALLIUM-ARSENIDE LAYERS FROM VAPOR-PHASE
LAVRENTIEVA, LG
IKONNIKOVA, GM
KRASILNIKOVA, LM
CRYSTAL RESEARCH AND TECHNOLOGY, 1981, 16 (08) : 893 - 898
[7] LOW-TEMPERATURE PROCESS PRODUCES STABLE INSULATING LAYERS IN GALLIUM-ARSENIDE
SHANDLE, J
ELECTRONIC DESIGN, 1993, 41 (11) : 36 - 36
[8] GROWTH RATE OF CRYSTALLINE LAYERS OF GALLIUM ARSENIDE IN IODIDE PROCESS
SHEFTAL, NN
MAGOMEDO.KA
SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1967, 12 (01): : 129 - &
[9] GROWTH OF GALLIUM-ARSENIDE LAYERS BY LIQUID EPITAXY FROM SOLUTION IN AN INDIUM-GALLIUM-ARSENIC MELT
MARONCHUK, YE
NEVOROV, VP
INORGANIC MATERIALS, 1984, 20 (09) : 1233 - 1234
[10] SELECTIVE AREA GROWTH OF GALLIUM-ARSENIDE BY METALORGANIC VAPOR-PHASE EPITAXY
GHOSH, C
LAYMAN, RL
APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1229 - 1231

← 1 2 3 4 5 →