A NEW APPROACH TO ANALYTICALLY SOLVING THE TWO-DIMENSIONAL POISSON EQUATION AND ITS APPLICATION IN SHORT-CHANNEL MOSFET MODELING

被引：0

|

作者：

LIN, PS

WU, CY

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1947 / 1956

页数：10

相关论文

共 50 条

[1] NEW APPROACH TO ANALYTICALLY SOLVING THE TWO-DIMENSIONAL POISSON'S EQUATION AND ITS APPLICATION IN SHORT-CHANNEL MOSFET MODELING.
Lin, Pole-Shang
Wu, Ching-Yuan
IEEE Transactions on Electron Devices, 1987, ED-34 (09) : 1947 - 1956
[2] COMPARISON BETWEEN TWO-DIMENSIONAL SHORT-CHANNEL MOSFET MODELS
KUMAR, U
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (01): : 37 - 46
[3] TWO-DIMENSIONAL ANALYTICAL MODELING OF THRESHOLD VOLTAGES OF SHORT-CHANNEL MOSFET's.
Poole, D.R.
Kwong, D.L.
Electron device letters, 1984, EDL-5 (11): : 443 - 446
[4] Two-Dimensional Analytical modeling of fully Depleted Short-Channel DG SOI MOSFET
Hosseini, Seyed Ebrahim
Anvarifard, Mohammad Kazem
Armaki, Mahdi Gordi
PROCEEDINGS OF THE 2009 INTERNATIONAL CONFERENCE ON SIGNAL PROCESSING SYSTEMS, 2009, : 897 - 900
[5] Simulation Study of Short-Channel Effect in MOSFET with Two-Dimensional Materials Channel
Harada, Naoki
Sato, Shintaro
Yokoyama, Naoki
IEICE TRANSACTIONS ON ELECTRONICS, 2015, E98C (03): : 283 - 286
[6] QUASI-2-DIMENSIONAL ANALYTICAL SOLUTION OF POISSON EQUATION IN ARBITRARILY DOPED SHORT-CHANNEL MOSFET
SKOTNICKI, T
ELECTRONICS LETTERS, 1983, 19 (19) : 797 - 798
[7] Two-dimensional analytical modeling of the source/drain engineering influence on short-channel effects in SOI MOSFET's
Joachim, Hans-Oliver, 1600, JJAP, Minato-ku, Japan (34):
[8] TWO-DIMENSIONAL ANALYTICAL MODELING OF THRESHOLD VOLTAGES OF SHORT-CHANNEL MOSFETS
POOLE, DR
KWONG, DL
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 443 - 446
[9] THE VOLTAGE-DOPING TRANSFORMATION - A NEW APPROACH TO THE MODELING OF MOSFET SHORT-CHANNEL EFFECTS
SKOTNICKI, T
MERCKEL, G
PEDRON, T
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (03) : 109 - 112
[10] A NEW ANALYTICAL AND STATISTICAL-ORIENTED APPROACH FOR THE TWO-DIMENSIONAL ANALYSIS OF SHORT-CHANNEL MOSFETS
CONTI, M
TURCHETTI, C
MASETTI, G
JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 253 - 256

← 1 2 3 4 5 →