X-RAY CHEMICAL-ANALYSIS OF MULTILAYERED THIN-FILMS BY SCANNING ELECTRON-MICROSCOPY AND TOTAL-REFLECTION-ANGLE X-RAY SPECTROSCOPY

Scanning electron microscopy and total-reflection-angle X-ray spectroscopy (SEM-TRAXS) have been applied to X-ray chemical analysis of multilayered thin films on Si substrates. Clear differences were observed in the take-off angle (theta(t)) dependence of the X-rav intensities between Pd(10 nm)/Au(10 nm)/Si and Au(10 nm)/Pd(10 nm)/Si structures. The theta(t) dependence varied with layer thickness increase from 10 to 13 nm. An AlN(30 nm)/Al2O3(30 nm)/Si structure was also successfully analyzed by measuring the theta(t) dependence of NKalpha, OKalpha, AlKalpha and SiKalpha lines.