OPTICAL CHARACTERIZATION OF PURE ZNSE FILMS GROWN ON GAAS

被引：82
|
作者：
KIM, YD
COOPER, SL
KLEIN, MV
JONKER, BT
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] USN,RES LAB,WASHINGTON,DC 20375
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期
关键词：
D O I：
10.1063/1.109373
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the first spectroscopic ellipsometry study of the E0, E0+DELTA0, E1, and E1+DELTA1 critical points in high-quality ZnSe films. These data seem to be the best identification of E1 and E1+DELTA1 peaks to date using ellipsometry. We also describe a chemical etching procedure which was successfully used to remove the natural surface oxide overlayer on the ZnSe films. X-ray photoelectron spectroscopy data after NH4OH treatment shows the disappearance of oxygen and oxidized Se peaks demonstrating the successful removal of surface oxide overlayer on ZnSe.
引用
收藏
页码：2387 / 2389
页数：3
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