BREAKDOWN VOLTAGE OF GAAS DIODES HAVING NEARLY ABRUPT JUNCTIONS

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作者：

KRESSEL, H

BLICHER, A

GIBBONS, LH

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PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1962年 / 50卷 / 12期

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TM [电工技术]; TN [电子技术、通信技术];

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0808 ; 0809 ;

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页码：2493 / &

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