10 BIT 200MSPS GAAS BIFET SAMPLE-AND-HOLD CIRCUIT

被引：1
|
作者：
YU, J
BECCUE, S
HO, WJ
ZAMPARDI, P
CHANG, MF
WANG, KC
机构：
[1] Rockwell Science Center, Thousand Oaks
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 16期
关键词：
SAMPLE AND HOLD CIRCUITS; FIELD EFFECT TRANSISTORS;
D O I：
10.1049/el:19950947
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A GaAs BiFET sample and hold circuit has been implemented and evaluated. SINAD (signal to noise and distortion) was measured to be similar to 60 dB, but was limited by the test setup. The device accepts a differential input and produces a differential output. The S/H is clocked differentially at rates of up to 200 MHz. 12 bit performance was expected from SPICE simulations. Despite our test setup limitations, 10 bit performance was Observed at 200 MSPS with an input signal frequency of 198 MHz.
引用
收藏
页码：1335 / 1337
页数：3
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