ULTRAHIGH SENSITIVITY STIMULATED RAMAN GAIN SPECTROSCOPY

被引：50
|
作者：
LEVINE, BF
BETHEA, CG
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 01期
关键词：
D O I：
10.1109/JQE.1980.1070342
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using a synchronously pumped mode-locked dye laser system, the authors have obtained a factor of 300 improvement in signal to noise ratio (S/N) over previous CW experiments using stimulated Raman gain spectroscopy, and achieved an S/N equals 200,000 for a 1 s integration time in bulk benzene. This result confirms the sensitivity of the picosecond Raman gain approach and would allow the detection of a monolayer using a pump intensity of 100 MW/cm**2.
引用
收藏
页码：85 / 89
页数：5
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