AN ANALYTICAL MODEL FOR LDD DRAIN STRUCTURES

被引：7

作者：

HUANG, JST

机构：

[1] Honeywell Inc, Plymouth, MN, USA, Honeywell Inc, Plymouth, MN, USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 07期

关键词：

SEMICONDUCTOR MATERIALS - Doping;

D O I：

10.1109/16.3383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An approximate analytical model for short-channel IGFET (isolated-gate field-effect transistor) LDD structures in saturation is developed from a quasi-two-dimensional analysis under the assumption of a nonvanishing field derivative at the pinchoff point. The differences between this model and existing model are compared. It is suggested that the model is useful in determining the location of the pinchoff point, whereby the effect of channel-length modulation can be assessed.

引用

页码：1158 / 1159

页数：2

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