A SOLID-STATE IMAGE-STORAGE PANEL BASED ON FIELD-EFFECT CONDUCTIVITY CONTROL

被引：0
|
作者：
KAZAN, B
WINSLOW, JS
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 06期
关键词：
D O I：
10.1109/T-ED.1968.16293
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：425 / &
相关论文
共 50 条
  • [1] IMAGE-STORAGE PANELS BASED ON FIELD-EFFECT CONTROL OF CONDUCTIVITY
    KAZAN, B
    WINSLOW, JS
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 285 - &
  • [2] VIEWING STORAGE TUBES BASED UPON FIELD-EFFECT CONDUCTIVITY CONTROL
    KAZAN, B
    WINSLOW, JS
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (10): : 1716 - &
  • [3] FIELD-EFFECT TRANSISTOR AS A SOLID-STATE REFERENCE ELECTRODE
    COMTE, PA
    JANATA, J
    ANALYTICA CHIMICA ACTA, 1978, 101 (02) : 247 - 252
  • [4] A NEW TYPE OF FIELD-EFFECT IMAGE STORAGE PANEL WITH A PHOTOCONDUCTIVE CHARGING LAYER
    KAZAN, B
    FOOTE, DP
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (11): : 2057 - &
  • [5] Maximizing Field-Effect Mobility and Solid-State Luminescence in Organic Semiconductors
    Dadvand, Afshin
    Moiseev, Andrey G.
    Sawabe, Kosuke
    Sun, Wei-Hsin
    Djukic, Brandon
    Chung, Insik
    Takenobu, Taishi
    Rosei, Federico
    Perepichka, Dmitrii F.
    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2012, 51 (16) : 3837 - 3841
  • [6] FIELD-EFFECT CONTROL OF CONDUCTANCE IN ZNO AND ITS APPLICATION TO IMAGE STORAGE
    KAZAN, B
    WINSLOW, JS
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1490 - &
  • [7] Enhanced Solid-State Order and Field-Effect Hole Mobility through Control of Nanoscale Polymer Aggregation
    Chen, Mark S.
    Lee, Olivia P.
    Niskala, Jeremy R.
    Yiu, Alan T.
    Tassone, Christopher J.
    Schmidt, Kristin
    Beaujuge, Pierre M.
    Onishi, Seita S.
    Toney, Michael F.
    Zettl, Alex
    Frechet, Jean M. J.
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2013, 135 (51) : 19229 - 19236
  • [8] THE BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) - A NEW FIELD-EFFECT SOLID-STATE DEVICE - THEORY AND STRUCTURES
    TAYLOR, GW
    SIMMONS, JG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2345 - 2367
  • [9] Role of Molecular Order and Solid-State Structure in Organic Field-Effect Transistors
    Mas-Torrent, Marta
    Rovira, Concepcio
    CHEMICAL REVIEWS, 2011, 111 (08) : 4833 - 4856
  • [10] BIPOLAR INVERSION CHANNEL FIELD-EFFECT TRANSISTOR (BICFET) - A NEW FIELD-EFFECT SOLID-STATE DEVICE: THEORY AND STRUCTURES.
    Taylor, Geoffrey W.
    Simmons, John G.
    IEEE Transactions on Electron Devices, 1985, ED-32 (11) : 2345 - 2367
12345