The investigation of luminescence properties of nitride-based heterostructures, containing superlattice

被引：0
|
作者：
Menkovich, E. A. [1 ]
Solomonov, A., V [1 ]
Tarasov, S. A. [1 ]
Yurgin, P. A. [1 ]
机构：
[1] St Petersburg Electrotech Univ, LETI, 5 Prof Popov Str, St Petersburg 197376, Russia
来源：
FUNCTIONAL MATERIALS | 2014年 / 21卷 / 02期
关键词：
D O I：
10.15407/fm21.02.142
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of superlattice adding on the luminescence properties of heterostructures based on (Al,In,Ga)N was investigated. It is shown that using structures with two superlattices: the InGaN/InGaN under active region and the AlGaN/GaN as a top p-layer gives the best effect. The elastic stresses on heterointerface of these structure are compensated optimally. As a result they are the most effective and stable functionality.
引用
收藏
页码：142 / 145
页数：4
相关论文
共 50 条
  • [1] Application of the electron probe microanalysis in nitride-based heterostructures investigation
    Kuznetsova, Yana
    Baidakova, Marina
    Flegontova, Ekaterina
    Kuznetsov, Anton
    Sitnikova, Alla
    Zamoryanskaya, Maria
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (04): : 749 - 753
  • [2] Self-heating process influence on efficiency of luminescence of nitride-based heterostructures
    Menkovich, E. A.
    Tarasov, S. A.
    Lamkin, I. A.
    Kurin, S. Yu
    Antipov, A. A.
    Roenkov, A. D.
    Barash, I. S.
    Helava, H. I.
    Makarov, Yu N.
    15TH RUSSIAN YOUTH CONFERENCE ON PHYSICS AND ASTRONOMY (PHYSICA.SPB), 2013, 461
  • [3] Internal electric fields in nitride-based heterostructures
    Hangleiter, A
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 : 58 - 68
  • [4] Recent progress in synthesis, properties, and applications of hexagonal boron nitride-based heterostructures
    Meng, Junhua
    Wang, Denggui
    Cheng, Likun
    Gao, Menglei
    Zhang, Xingwang
    NANOTECHNOLOGY, 2019, 30 (07)
  • [5] Gallium nitride-based nanowire radial heterostructures for nanophotonics
    Qian, F
    Li, Y
    Gradecak, S
    Wang, DL
    Barrelet, CJ
    Lieber, CM
    NANO LETTERS, 2004, 4 (10) : 1975 - 1979
  • [6] Dielectric and Mechanical Properties Evaluation of Polypropylene Containing Nitride-based Nanoparticles
    Lian, Zheng
    Wang, Xinyu
    Andritsch, Thomas
    2019 2ND INTERNATIONAL CONFERENCE ON ELECTRICAL MATERIALS AND POWER EQUIPMENT (ICEMPE 2019), 2019, : 250 - 253
  • [7] Relaxation of misfit-induced stress in nitride-based heterostructures
    Terao, S
    Iwaya, M
    Sano, T
    Nakamura, T
    Kamiyama, S
    Amano, H
    Akasaki, I
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) : 947 - 950
  • [8] Piezoelectric quantum 1/f noise in nitride-based heterostructures
    Handel, Peter H.
    Morkoc, Hadis
    Sia, Engkee
    Truong, Amanda M.
    GALLIUM NITRIDE MATERIALS AND DEVICES III, 2008, 6894
  • [9] Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate
    Rahmani, Mehr Khalid
    Kim, Min-Hwi
    Hussain, Fayyaz
    Abbas, Yawar
    Ismail, Muhammad
    Hong, Kyungho
    Mahata, Chandreswar
    Choi, Changhwan
    Park, Byung-Gook
    Kim, Sungjun
    NANOMATERIALS, 2020, 10 (05)
  • [10] Quantum Efficiency of Gallium Nitride-Based Heterostructures with GaInN Quantum Wells
    Vigdorovich, E. N.
    SEMICONDUCTORS, 2018, 52 (15) : 1925 - 1930
12345