SPONTANEOUS RECOMBINATION, GAIN AND REFRACTIVE-INDEX VARIATION FOR 1.6 MU-M WAVELENGTH INGAASP-INP LASERS

被引：47

作者：

STUBKJAER, K ^{[1
]}

ASADA, M ^{[1
]}

ARAI, S ^{[1
]}

SUEMATSU, Y ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 08期

关键词：

D O I：

10.1143/JJAP.20.1499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1499 / 1505

页数：7

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[1] MODULATION CHARACTERISTICS OF INGAASP-INP LEDS AT 1.5 MU-M WAVELENGTH
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[4] WAVELENGTH VARIATION OF 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP INP LASERS DUE TO DIRECT MODULATION
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[5] MEASUREMENTS OF REFRACTIVE-INDEX VARIATION WITH FREE CARRIER DENSITY AND TEMPERATURE FOR 1.6-MU-M GAINASP-INP LASERS
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[7] ACCELERATED AGING CHARACTERISTICS OF INGAASP-INP BURIED HETEROSTRUCTURE LASERS EMITTING AT 1.3 MU-M
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[8] DEFECTS OF RAPID DEGRADATION ON FACET MIRRORS OF INGAASP-INP LASERS IN THE REGION OF 1.3 MU-M
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[9] ULTRAHIGH SPEED INGAASP/INP DFB LASERS EMITTING AT 1.3 MU-M WAVELENGTH
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[10] FAST PULSE BEHAVIOR OF INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS EMITTING AT 1.27 MU-M
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