ELECTRON-PHONON INTERACTION AT A SILICON SURFACE

被引：9
|
作者：
KELLY, MJ [1 ]
HANKE, W [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
来源：
PHYSICAL REVIEW B | 1981年 / 23卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.23.924
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：924 / 927
页数：4
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