PHOTOCURRENT OSCILLATIONS IN THE CDTE ELECTROLYTE SYSTEMS

被引:13
|
作者
MARCU, V
TENNE, R
机构
[1] Weizmann Inst of Science, Israel
来源
JOURNAL OF PHYSICAL CHEMISTRY | 1988年 / 92卷 / 25期
关键词
Electrodes; Electrochemical--Physical Chemistry - Electrolytes - Photoelectricity - Semiconducting cadmium compounds - Semiconducting tellurium compounds;
D O I
10.1021/j100336a012
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Photocurrent oscillations have been observed at an n-type CdTe semiconductor electrode in a cesium sulfide solution. Measurements were performed under potentiostatic conditions in a closed cell, at constant temperature and light intensity. The dependence of the oscillations on these parameters is reported. We have observed them to be different from the typical behavior of semiconductor electrodes. The most striking is the nonlinear behavior as a function of light intensity. A comparison to other related systems (CdS, CdSe) and solution compositions was performed. The oscillating behavior lasts for about 2 h and may be explained by the existence of a Te layer of variable width.
引用
收藏
页码:7089 / 7092
页数:4
相关论文
共 50 条
  • [1] PHOTOCURRENT OSCILLATIONS AT THE NORMAL-GAAS-ELECTROLYTE INTERFACE
    VANMEIRHAEGHE, RL
    CARDON, F
    GOMES, WP
    ELECTROCHIMICA ACTA, 1979, 24 (09) : 1047 - 1049
  • [2] Photocurrent characteristics of CdTe nanoparticles
    Kim, JH
    Kim, H
    Cho, K
    Jeong, DY
    Kim, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (2A): : 1033 - 1039
  • [3] Photocurrent characteristics of CdTe nanoparticles
    Kim, Jin-Hyoung
    Kim, Hyunsuk
    Cho, Kyoungah
    Jeong, Dong-Young
    Kim, Sangsig
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1600, 45 (2 A): : 1033 - 1039
  • [4] Characterisation of CdS|CdTe heterojunctions by photocurrent spectroscopy and electrolyte electroreflectance/absorbance spectroscopy (EEA/EER)
    Duffy, NW
    Peter, LM
    Wang, RL
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2002, 532 (1-2): : 207 - 214
  • [5] PHOTOCURRENT OSCILLATIONS IN PBO PHOTORESISTORS
    IZVOZCHI.VA
    KOSMAN, MS
    CHERNYAB.KA
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (05): : 1248 - +
  • [6] DIODE CDTE STRUCTURES WITH INJECTION AMPLIFICATION OF THE PHOTOCURRENT
    LOSEV, VV
    ORLOV, BM
    KHUDAVERDYAN, SK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1080 - 1081
  • [7] PHOTOCURRENT OSCILLATIONS AT PHOTOANODES OF CDS FILMS
    JOSSEAUX, P
    MICHEAU, JC
    KIRSCHDEMESMAEKER, A
    ELECTROCHIMICA ACTA, 1985, 30 (08) : 1093 - 1094
  • [8] OSCILLATIONS OF PHOTOCURRENT IN GE WITH RADIATION DEFECTS
    RUBINOVA, EE
    NOVIKOV, SR
    KONOPLEV.RF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (10): : 1294 - &
  • [9] Photocurrent oscillations in a quantum dot photodiode
    Villas-Bôas, JM
    Ulloa, SE
    Govorova, AO
    SOLID STATE COMMUNICATIONS, 2005, 134 (1-2) : 33 - 35
  • [10] Temperature dependence of the photocurrent in p-type CdTe
    Jeong, TS
    Yu, PY
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 43 (06) : 1101 - 1104