SUBSTRATE HEATER FOR MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
VLASOV, VP
GELMAN, YA
YAKIMKIN, VN
机构：
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 1994年 / 37卷 / 04期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The heater is designed to maintain a given substrate temperature in molecular-beam epitaxy. At temperatures of 200-700 degrees C, the temperature varies by 2-5 degrees C over the chip surface (with a diameter of 20 mm). The substrate temperature is stabilized about five minutes after the heater temperature settles.
引用
收藏
页码：519 / 520
页数：2
相关论文
共 50 条
12345