METHANE HYDROGEN III-V METAL-ORGANIC REACTIVE ION ETCHING

被引：19

作者：

SEMU, A ^{[1
]}

SILVERBERG, P ^{[1
]}

机构：

[1] VACUTEC AB,HANTVERKARE GATAN 4,S-23234 ARLEV,SWEDEN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 04期

关键词：

D O I：

10.1088/0268-1242/6/4/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A CH4/H2 gas mixture has been used for reactive ion etching of GaAs, GaP, GaSb, InP and GalnAsP in an effort to achieve slow, smooth, anisotropic mesa etching of micrometre to submicrometre structures without causing considerable surface damage or stoichiometric modifications to the etched compounds. Parametric effects have been studied to try to understand the etching mechanism.

引用

页码：287 / 289

页数：3

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