共 50 条
- [1] GAAS/(CA,SR)F2/(001) GAAS LATTICE-MATCHED STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXYAPPLIED PHYSICS LETTERS, 1984, 44 (12) : 1146 - 1148SISKOS, SFONTAINE, CMUNOZYAGUE, A
- [2] LASER-MODIFIED MOLECULAR-BEAM EPITAXIAL-GROWTH OF (AL)GAAS ON GAAS AND (CA,SR)F2/GAAS SUBSTRATESAPPLIED PHYSICS LETTERS, 1988, 52 (12) : 966 - 968TU, CWDONNELLY, VMBEGGY, JCBAIOCCHI, FAMCCRARY, VRHARRIS, TDLAMONT, MG
- [3] EPITAXIAL RELATIONS IN LATTICE-MATCHED (CA,SR)F2 FILMS GROWN ON GAAS(111) AND GE(111) SUBSTRATESJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10): : L803 - L805ISHIWARA, HTSUTSUI, KASANO, TFURUKAWA, S
- [4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF LATTICE MATCHED GAAS/ERP0.6AS0.4/(001) AND (111) GAAS HETEROSTRUCTURESJOURNAL OF CRYSTAL GROWTH, 1990, 102 (1-2) : 309 - 313CAULET, JLECORRE, AGUENAIS, BROPARS, GGUIVARCH, A
- [5] MOLECULAR-BEAM EPITAXIAL-GROWTH AND THERMODYNAMIC ANALYSIS OF INGAAS AND INALAS LATTICE-MATCHED TO INPJOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 518 - 522MCELHINNEY, MSTANLEY, CR
- [6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAASJOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4928 - 4931ASAHI, HKAWAMURA, YNAGAI, H
- [7] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) AND GE(100)JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 552 - 553WANG, WI
- [9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF (100) HGSE ON GAASJOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 331 - 334BECKER, CRHE, LEINFELDT, SWU, YSLERONDEL, GHEINKE, HOEHLING, SBICKNELLTASSIUS, RNLANDWEHR, G
- [10] MOLECULAR-BEAM EPITAXIAL-GROWTH MECHANISMS ON THE GAAS(100) SURFACEJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 733 - 735HARBISON, JPFARRELL, HH