A MODEL FOR LOW-FREQUENCY CAPACITANCE IN CADMIUM TELLURIDE THIN-FILMS

被引:6
|
作者
GOULD, RD
GRAVANO, S
ISMAIL, BB
机构
[1] Department of Physics, University of Keele, Keele
关键词
D O I
10.1016/0040-6090(91)90328-U
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dependence of capacitance on thickness has been measured at 1 kHz for CdTe thin films in the thickness range 0.1-1.0-mu-m. The results are shown to be inconsistent with a simple parallel plate capacitance model or with models which also include either a single parallel or series capacitance. A model has therefore been developed which is based on the assumption of additional parallel and series capacitances. The model provides an excellent fit to the data and yields a value of relative permittivity of 9.55 or 9.62 (depending on the details of the model used), which is consistent with other values from the literature. Values of the capacitances derived from the model are approximately 96 pF (parallel) and 27 nF (series). Derived permittivity values are relatively insensitive to the derived capacitance values, always showing a change of less than 1% for capacitance changes of 10%.
引用
收藏
页码:93 / 102
页数:10
相关论文
共 50 条
  • [1] CADMIUM TELLURIDE THIN-FILMS ON SILICON SUBSTRATES
    KUO, TC
    CHI, YT
    GHOSH, PK
    KORNREICH, PG
    BEASOCK, J
    [J]. THIN SOLID FILMS, 1991, 197 (1-2) : 107 - 115
  • [2] STRUCTURAL CHARACTERIZATION OF THIN-FILMS OF CADMIUM TELLURIDE
    SAHA, S
    PAL, U
    SAMANTARAY, BK
    CHAUDHURI, AK
    BANERJEE, HD
    [J]. THIN SOLID FILMS, 1988, 164 : 85 - 89
  • [3] ON THE ORIGIN OF LOW-FREQUENCY NOISE IN HTCS THIN-FILMS
    JUNG, G
    BONALDI, M
    VITALE, S
    KONOPKA, J
    [J]. PHYSICA C, 1991, 180 (1-4): : 276 - 279
  • [4] GROWTH AND MICROSTRUCTURAL PROPERTIES OF CADMIUM TELLURIDE THIN-FILMS
    KUO, TC
    GHOSH, P
    KORNREICH, P
    BEASOCK, J
    [J]. THIN SOLID FILMS, 1990, 193 (1-2) : 220 - 226
  • [5] ELECTROMIGRATION EFFECT ON LOW-FREQUENCY NOISE IN AL THIN-FILMS
    LIOU, DM
    GONG, J
    CHEN, CC
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04): : 708 - 710
  • [6] ON THE PROPERTIES OF ELECTROCHEMICALLY OBTAINED MERCURY CADMIUM TELLURIDE THIN-FILMS
    CAMARERO, EG
    ARJONA, F
    GUILLEN, C
    FATAS, E
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 1990, 26 (05) : 421 - 432
  • [7] PROPERTIES OF RF SPUTTERED, MERCURY CADMIUM TELLURIDE THIN-FILMS
    CORNELY, RH
    SUCHOW, L
    DERIDDER, D
    GABARA, T
    DIODATO, P
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C123 - C124
  • [8] PHOTOCONDUCTIVITY AND PHOTOMAGNETOELECTRIC EFFECT STUDIES OF CADMIUM TELLURIDE THIN-FILMS
    EDWARDS, SW
    MYERS, TH
    SCHETZINA, JF
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 274 - 274
  • [9] ELECTRODEPOSITION OF THIN-FILMS OF CADMIUM TELLURIDE - CHARACTERIZATION AND PHOTOELECTROCHEMICAL ACTIVITY
    MARTINEZ, PL
    FERIA, OS
    [J]. AFINIDAD, 1989, 46 (422) : 283 - 288
  • [10] AC conductivity and capacitance measurements on evaporated cadmium telluride thin films
    Ismail, BB
    Gould, RD
    [J]. METAL/NONMETAL MICROSYSTEMS: PHYSICS, TECHNOLOGY, AND APPLICATIONS, 1996, 2780 : 46 - 51