共 50 条
- [1] OPTICAL-EXCITATION OF ELECTRONS BOUND TO SHALLOW DONORS IN GAP ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1979, 47 (1-3): : 69 - 74
- [2] Optical absorption due to hydrogen bound to interstitial Si in Si crystal grown in hydrogen atmosphere DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 229 - 234
- [3] Optical absorption due to hydrogen bound to interstitial Si in Si crystal grown in hydrogen atmosphere Mater Sci Forum, pt 1 (229-234):
- [4] NUCLEUS EXCITATION DUE TO ANNIHILATION OF A POSITRON BY BOUND ATOMIC ELECTRONS UKRAINSKII FIZICHESKII ZHURNAL, 1983, 28 (08): : 1146 - 1152
- [5] ABSORPTION OF FAST ELECTRONS DUE TO PLASMON EXCITATION IN A SINGLE CRYSTAL ZEITSCHRIFT FUR PHYSIK, 1968, 213 (03): : 244 - &
- [7] Self-interstitial in electron-irradiated Si detected by optical absorption due to hydrogen bound to it JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (7A): : L806 - L808
- [8] INFRARED-ABSORPTION OF A GAP MODE DUE TO SI IN ALAS PHYSICAL REVIEW B, 1991, 44 (19): : 10895 - 10897
- [9] EXPERIMENTAL VERTIFICATION OF OPTICAL ABSORPTION DUE TO EXCITATION OF LONGITUDINAL PLASMONS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (01): : 69 - &
- [10] OPTICAL ABSORPTION DUE TO DONOR ELECTRONS IN SEMICONDUCTORS WITH SPHEROIDAL CONDUCTION BAND JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (02): : 541 - &