FORMATION OF EPITAXIAL NISI2 BY HIGH-DOSE IMPLANTATION AND RAPID THERMAL ANNEALING

被引：2

作者：

PETUKHOV, VY

KHAIBULLIN, IB

ZARIPOV, MM

WIESER, E

GROTZSCHEL, R

BARTSCH, H

机构：

[1] ACAD SCI GDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,O-4010 HALLE,GERMANY

[2] ACAD SCI GDR,ZENT INST KERNFORSCH,O-8051 DRESDEN,GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 117卷 / 02期

关键词：

D O I：

10.1002/pssa.2211170217

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of NiSi2 by high dose implantation of Ni into Si (2.5 × 1017 Ni/cm2, 40 keV) and subsequent rapid thermal annealing is investigated. Rutherford backscattering is used in order to detect the partly epitaxial regrowth of the implanted layer. Investigations using cross‐sectional TEM give detailed information about the mechanism of the recrystallization process and the formation of NiSi compounds. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：477 / 484

页数：8

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