ELECTRICAL-PROPERTIES OF QUENCH-DEPOSITED AMORPHOUS SNTE FILMS

Hall coefficient and electrical resistivity were measured on amorphous SnTe films by a high input-impedance technique. All the holes responsible for the metallic conduction in the crystalline phase are found to be localized in the amorphous phase, where the valence band mobility edge E(v) lies about 0.11 eV below the Fermi level. The mobility gap was estimated to be about 0.58 eV. The Hall mobility of the nonlocalized holes near E(v) is about four orders of magnitude smaller than that in the crystalline phase, suggesting a strongly disordered nature of the amorphous phase.