INFLUENCE OF OXYGEN ON VACUUM DEPOSITED IRON THIN-FILM

被引：11

作者：

YOSHIDA, N

FUJITA, FE

机构：

来源：

JOURNAL OF PHYSICS F-METAL PHYSICS | 1972年 / 2卷 / 06期

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D O I：

10.1088/0305-4608/2/6/006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1009 / &

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[1] ANISOTROPY OF SELENIUM THIN-FILM OBLIQUELY DEPOSITED IN VACUUM
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[2] VACUUM-DEPOSITED THIN-FILM CAPACITORS OF SILICON MONOXIDE
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[3] THE MULTINUCLEI GROWTH EQUATION FOR A VACUUM-DEPOSITED THIN-FILM
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[4] VACUUM-DEPOSITED THIN-FILM SOLID ELECTROLYTE COULOMETERS AND BATTERIES
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[5] IRON THIN-FILM MAGNETIC RECORDING TAPE BY VACUUM DEPOSITION
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[7] Vacuum/thin-film research
不详
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[8] HYDROGEN DIFFUSION IN A THIN-FILM OF PD, NI AND CU DEPOSITED ON IRON
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[9] ION-IMPLANTATION THROUGH ALUMINUM THIN-FILM DEPOSITED ON IRON
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[10] RF-SPUTTER-DEPOSITED MULTILAYER THIN-FILM OXYGEN SENSORS
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