RESIDUAL DAMAGE TO AN ATOMICALLY CLEANED LOW-TEMPERATURE-ANNEALED SI (100) SURFACE

被引：19
|
作者：
YAMADA, I [1 ]
MARTON, D [1 ]
SARIS, FW [1 ]
机构：
[1] FOM,INST ATOOM MOLECUULFYS,AMSTERDAM,NETHERLANDS
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 06期
关键词：
D O I：
10.1063/1.91988
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：563 / 564
页数：2
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