LANDAU-LEVELS IN A BAND-INVERTED JUNCTION AND QUANTUM-WELL

被引：7
|
作者：
AGASSI, D
机构：
[1] Naval Surface Warfare Center, White Oak
来源：
PHYSICAL REVIEW B | 1994年 / 49卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.49.10393
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The Landau levels pertaining to a symmetric band-inverted junction and quantum well are calculated in the presence of a magnetic field parallel to the interface. It is shown that the effective band gap is widened at the interfaces, the Landau eigenenergies vary nonmonotonically with distance of the orbit's center from the structure interfaces and that these levels have a noninteger number of harmonic-oscillator energy quanta. The Landau levels in the presence of a magnetic field perpendicular to the interfaces are briefly discussed.
引用
收藏
页码：10393 / 10401
页数：9
相关论文
共 50 条
12345