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- [2] ROOM-TEMPERATURE NICKEL SILICIDE NUCLEATION ON SI(111) AND SI(100) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 930 - 930
- [6] Room-temperature photoreflectance and photoluminescence of heavily Si-doped GaAs Lee, Chul, 1600, American Inst of Physics, Woodbury, NY, United States (77):
- [8] Stable passivation systems for GaAs prepared by room-temperature deposition of SiO2 films Hashizume, Tamotsu, 1600, JJAP, Minato-ku, Japan (33):
- [9] STABLE PASSIVATION SYSTEMS FOR GAAS PREPARED BY ROOM-TEMPERATURE DEPOSITION OF SIO2-FILMS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7A): : 3887 - 3888