CHARACTERIZATION OF DEEP LEVEL DEFECTS IN THERMALLY ANNEALED FE-DOPED SEMIINSULATING INP BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY

被引：22

作者：

KALBOUSSI, A ^{[1
]}

MARRAKCHI, G ^{[1
]}

GUILLOT, G ^{[1
]}

KAINOSHO, K ^{[1
]}

ODA, O ^{[1
]}

机构：

[1] NIPPON MIN CO LTD,ELECTR MAT & COMPONENTS RES LAB,TODA,SAITAMA 335,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 21期

关键词：

D O I：

10.1063/1.108134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoinduced current transient spectroscopy has been used to show the effect of thermal annealing on deep level defects in semi-insulating Fe doped InP wafers. The annealing experiments have been accomplished in an infrared image furnace during 15 min at temperatures ranging from 663 to 820-degrees-C. We show that this treatment leads to the formation of four deep traps named T1-T4 having the following activation energies: 0.14, 0.21, 0.41, and 0.53 eV, respectively. We show that the thermal anneal at high temperature leads to deterioration of the electrical properties of the material.

引用

页码：2583 / 2585

页数：3

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